Transistors IGBT 600V 30A 187W TO-247-3 IKW30N60H3 InfineonTechnologies
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Specifications
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.95 V
Maximum Gate Emitter Voltage: - 20 V, 20 V
Continuous Collector Current at 25 C: 60 A
Pd - Power Dissipation: 187 W
Minimum Operating Temperature: - 40 C
Maximum Operating Temperature: + 175 C
Gate-Emitter Leakage Current: 100 nA
Height: 20.7 mm
Length: 15.87 mm
Width: 5.31 mm