Transistors Bipolar MJE13007G BJT 8A 400V 80W NPN
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Specifications
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 400 V
Collector- Base Voltage VCBO: 700 V
Emitter- Base Voltage VEBO: 9 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 8 A
Gain Bandwidth Product fT: 14 MHz
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 8 A
DC Collector/Base Gain hFE Min: 8
Height: 15.75 mm
Length: 10.53 mm
Minimum Operating Temperature: - 65 C
Packaging: Tube
Pd - Power Dissipation: 80 W
Factory Pack Quantity: 50
Width: 4.83 mm
Unit Weight: 6 g
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 400 V
Collector- Base Voltage VCBO: 700 V
Emitter- Base Voltage VEBO: 9 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 8 A
Gain Bandwidth Product fT: 14 MHz
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 8 A
DC Collector/Base Gain hFE Min: 8
Height: 15.75 mm
Length: 10.53 mm
Minimum Operating Temperature: - 65 C
Packaging: Tube
Pd - Power Dissipation: 80 W
Factory Pack Quantity: 50
Width: 4.83 mm
Unit Weight: 6 g
- Κατασκευαστής: ON Semiconductor
- Κωδικός Προϊόντος: 010875
- Διαθεσιμότητα: Αναμένεται Σύντομα
- Στο κατάστημα: 1,71€
- Τιμή web: 1,32€
- (H τιμή συμπεριλαμβάνει ΦΠΑ)
- Χωρίς ΦΠΑ: 1,06€
Χρειάζεσαι βοήθεια; +30 26510 24011
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