Transistor RF BLF225 VHF 12.5V 30W SOT-123
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V(BR)DSS (V) : 40
V(BR)GSS (V) : 20
I(D) Max. (A) : 9.0
P(D) Max. (W) : 68#
Maximum Operating Temp (шC) : 200х
I(DSS) Min. (A) :
I(DSS) Max. (A) : 1.0m
@V(DS) (V) (Test Condition) : 12.5
@Temp (шC) (Test Condition) : 25
g(fs) Min. (S) Trans. conduct. : 1.5
g(fs) Max; (S) Trans. conduct; : 2.2В
@V(DS) (V) (Test Condition) : 10
@I(D) (A) (Test Condition) : 3.0
V(GS)off Max. (V) :
@V(DS) (V) (Test Condition) :
@I(D) (A) (Test Condition) : 30m
Power Gain Min. (dB) : 8.5
@V(DD) (V) (Test Condition) : 12.5
@I(D) (A) (Test Condition) :
@Freq. (Hz) (Test Condition) : 175M
Noise Figure Min. (dB) :
@V(DS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Efficiency Min. : 60
@V(DD) (V) (Test Condition) : 12.5
@I(D) (A) (Test Condition) :
@Freq. (Hz) (Test Condition) : 175M
Operating Power Output Typ.(W) : 30
Semiconductor Material : Silicon
V(BR)GSS (V) : 20
I(D) Max. (A) : 9.0
P(D) Max. (W) : 68#
Maximum Operating Temp (шC) : 200х
I(DSS) Min. (A) :
I(DSS) Max. (A) : 1.0m
@V(DS) (V) (Test Condition) : 12.5
@Temp (шC) (Test Condition) : 25
g(fs) Min. (S) Trans. conduct. : 1.5
g(fs) Max; (S) Trans. conduct; : 2.2В
@V(DS) (V) (Test Condition) : 10
@I(D) (A) (Test Condition) : 3.0
V(GS)off Max. (V) :
@V(DS) (V) (Test Condition) :
@I(D) (A) (Test Condition) : 30m
Power Gain Min. (dB) : 8.5
@V(DD) (V) (Test Condition) : 12.5
@I(D) (A) (Test Condition) :
@Freq. (Hz) (Test Condition) : 175M
Noise Figure Min. (dB) :
@V(DS) (V) (Test Condition) :
@I(D) (A) (Test Condition) :
@Freq. (Hz) (Test Condition) :
Efficiency Min. : 60
@V(DD) (V) (Test Condition) : 12.5
@I(D) (A) (Test Condition) :
@Freq. (Hz) (Test Condition) : 175M
Operating Power Output Typ.(W) : 30
Semiconductor Material : Silicon