Transistor power MJ802G NPN 100V 30A TO-3
-12%
Αναμένεται Σύντομα
Προβολή
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 100 V
Collector- Emitter Voltage VCEO Max: 90 V
Emitter- Base Voltage VEBO: 4 V
Collector-Emitter Saturation Voltage: 0.8 V
Maximum DC Collector Current: 30 A
Gain Bandwidth Product fT: 2 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-204-2 (TO-3)
DC Collector/Base Gain hFE Min: 25
Maximum Power Dissipation: 200 W
Minimum Operating Temperature: - 65 C
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 100 V
Collector- Emitter Voltage VCEO Max: 90 V
Emitter- Base Voltage VEBO: 4 V
Collector-Emitter Saturation Voltage: 0.8 V
Maximum DC Collector Current: 30 A
Gain Bandwidth Product fT: 2 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-204-2 (TO-3)
DC Collector/Base Gain hFE Min: 25
Maximum Power Dissipation: 200 W
Minimum Operating Temperature: - 65 C
Νέο
-27%
Ref Code: 039175
Μπαταρία λιθίου, της EVE .
Τεχνικά χαρακτηριστικά
- Μέγεθος: 4/5A.
- Τύπος: Λιθίου
- Τάση: 3.0V.
..
15,00€ 10,91€
Χωρίς ΦΠΑ:8,80€
Χωρίς ΦΠΑ:8,80€
