Transistor N-Mosfet 2,5A 600v TO220-3 STP4NK60Z STMicroelectronics
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Transistor N-Mosfet
Specifications
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 4 A
Rds On - Drain-Source Resistance: 2 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 26 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 70 W
Channel Mode: Enhancement
Tradename: SuperMESH
Fall Time: 16.5 ns
Forward Transconductance - Min: 3 S
Rise Time: 9.5 ns
Typical Turn-Off Delay Time: 29 ns
Typical Turn-On Delay Time: 12 ns
Height: 9.15 mm
Length: 10.4 mm
Width: 4.6 mm
Unit Weight: 2 g
