Transistor N-Mosfet 11A 650v TO220-3 STP13N60M2 STMicroelectronics
Νέο
Προβολή
Transistor N-Mosfet
Specifications
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 380 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 17 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 110 W
Channel Mode: Enhancement
Tradename: MDmesh
Configuration: Single
Fall Time: 9.5 ns
Rise Time: 10 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 41 ns
Typical Turn-On Delay Time: 11 n
Unit Weight: 2 g
-24%
Κατόπιν Παραγγελίας
Ref Code: 039081
Επιδαπέδια καμπίνα με γυάλινη πόρτα
Η σειρά MS2 της DATEUP, είναι ειδικά σχεδιασμένη για servers υ..
405,50€ 308,18€
Χωρίς ΦΠΑ:248,53€
Χωρίς ΦΠΑ:248,53€
