Transistor N-Channel 800V FQP4N80
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Manufacturer: Fairchild Semiconductor
Product Category: MOSFET
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 800 V
Gate-Source Breakdown Voltage: +/- 30 V
Continuous Drain Current: 3.9 A
Rds On: 3.6 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Fall Time: 35 ns
Forward Transconductance - Min: 3.8 S
Minimum Operating Temperature: - 55 C
Power Dissipation: 130 W
Rise Time: 45 ns
Typical Turn-Off Delay Time: 35 ns
Product Category: MOSFET
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 800 V
Gate-Source Breakdown Voltage: +/- 30 V
Continuous Drain Current: 3.9 A
Rds On: 3.6 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Fall Time: 35 ns
Forward Transconductance - Min: 3.8 S
Minimum Operating Temperature: - 55 C
Power Dissipation: 130 W
Rise Time: 45 ns
Typical Turn-Off Delay Time: 35 ns
Νέο
-27%
Ref Code: 039175
Μπαταρία λιθίου, της EVE .
Τεχνικά χαρακτηριστικά
- Μέγεθος: 4/5A.
- Τύπος: Λιθίου
- Τάση: 3.0V.
..
15,00€ 10,91€
Χωρίς ΦΠΑ:8,80€
Χωρίς ΦΠΑ:8,80€
