Transistor MOSFET N-CHANNEL 800V 5.2A TO-220-3 STP7NK80Z
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Specifications
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 5.2 A
Rds On - Drain-Source Resistance: 1.8 Ohms
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 20 ns
Forward Transconductance - Min: 5 S
Height: 9.15 mm
Length: 10.4 mm
Pd - Power Dissipation: 125 W
Rise Time: 12 ns
Series: N-channel MDmesh
Factory Pack Quantity: 50
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 20 ns
Width: 4.6 mm
Unit Weight: 1,438 g
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 800 V
Id - Continuous Drain Current: 5.2 A
Rds On - Drain-Source Resistance: 1.8 Ohms
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 40 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Brand: STMicroelectronics
Configuration: Single
Fall Time: 20 ns
Forward Transconductance - Min: 5 S
Height: 9.15 mm
Length: 10.4 mm
Pd - Power Dissipation: 125 W
Rise Time: 12 ns
Series: N-channel MDmesh
Factory Pack Quantity: 50
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 45 ns
Typical Turn-On Delay Time: 20 ns
Width: 4.6 mm
Unit Weight: 1,438 g