Transistor mosfet N-Channel 500v 7A TO-220-3 IRFB11N50APBF Vishay Semiconductors
Προβολή
Specifications
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 11 A
Rds On - Drain-Source Resistance: 520 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 52 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 170 W
Fall Time: 28 ns
Product Type: MOSFETs
Rise Time: 35 ns
Typical Turn-On Delay Time:22 ns
Unit Weight:6 g
Height:15.49 mm
Length:10.41 mm
Width:4.7 mm
