Transistor Mosfet N-Chan 200V 20A IRFP240PBF
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Specifications
Id - Continuous Drain Current: 20 A
Vds - Drain-Source Breakdown Voltage: 200 V
Rds On - Drain-Source Resistance: 180 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 150 W
Mounting Style: Through Hole
Package/Case: TO-247-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 36 ns
Minimum Operating Temperature: - 55 C
Rise Time: 51 ns
Id - Continuous Drain Current: 20 A
Vds - Drain-Source Breakdown Voltage: 200 V
Rds On - Drain-Source Resistance: 180 mOhms
Transistor Polarity: N-Channel
Vgs - Gate-Source Breakdown Voltage: 20 V
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 150 W
Mounting Style: Through Hole
Package/Case: TO-247-3
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 36 ns
Minimum Operating Temperature: - 55 C
Rise Time: 51 ns
