Transistor Mosfet N-Ch 900 Volt 6 Amp Zener SuperMESH STW7NK90Z
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Specifications
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 900 V
Id - Continuous Drain Current: 5.8 A
Rds On - Drain-Source Resistance: 2 Ohms
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 46.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Height: 20.15 mm
Length: 15.75 mm
Pd - Power Dissipation: 140 W
Rise Time: 45 ns
Series: N-channel MDmesh
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 17 ns
Width: 5.15 mm
Unit Weight: 38 g
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 900 V
Id - Continuous Drain Current: 5.8 A
Rds On - Drain-Source Resistance: 2 Ohms
Vgs - Gate-Source Voltage: 30 V
Qg - Gate Charge: 46.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Packaging: Tube
Channel Mode: Enhancement
Configuration: Single
Fall Time: 20 ns
Height: 20.15 mm
Length: 15.75 mm
Pd - Power Dissipation: 140 W
Rise Time: 45 ns
Series: N-channel MDmesh
Transistor Type: 1 N-Channel
Type: MOSFET
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 17 ns
Width: 5.15 mm
Unit Weight: 38 g