Transistor MOSFET N-Ch 500V 52A 960W TO247-3 IXFH52N50P2 IXYS
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Specifications
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 500 V
Id - Continuous Drain Current: 52 A
Rds On - Drain-Source Resistance: 120 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Qg - Gate Charge: 113 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 960 W
Channel Mode: Enhancement
Tradename: HiPerFET
Configuration: Single
Product Type: MOSFETs
Transistor Type: 1 N-Channel
Ref Code: 039133
Specifications
Product Category: MOSFETs
Technology: Si
Mounting Style: Through Hole
Package/Case:..
21,72€
Χωρίς ΦΠΑ:17,52€
Χωρίς ΦΠΑ:17,52€
