Transistor MOSFET N 100V 5.6 Amp TO-220AB-3 IRF510PBF
-23%
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Specifications
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220AB-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 5.6 A
Rds On - Drain-Source Resistance: 540 mOhms
Vgs th - Gate-Source Threshold Voltage: 2 V
Vgs - Gate-Source Voltage: 10 V
Qg - Gate Charge: 8.3 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Pd - Power Dissipation: 43 W
Channel Mode: Enhancement
Transistor Type: 1 N-Channel
Brand: Vishay / Siliconix
Forward Transconductance - Min: 1.3 S
Fall Time: 9.4 ns
Product Type: MOSFET
Rise Time: 16 ns
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 6.9 ns
Unit Weight: 6 g
