Transistor MOSFET AUTO TO-252-3 100V 1 N-CH HEXFET AUIRLR120N

Specifications

Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 100 V
Id - Continuous Drain Current: 10 A
Rds On - Drain-Source Resistance: 185 mOhms
Vgs - Gate-Source Voltage: 16 V
Qg - Gate Charge: 13.3 nC
Minimum Operating Temperature: - 55 C
Channel Mode: Enhancement
Brand: Infineon / IR
Configuration: Single
Fall Time: 22 ns
Height: 2.3 mm
Length: 6.5 mm
Pd - Power Dissipation: 48 W
Rise Time: 35 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 4 ns
Width: 6.22 mm
Unit Weight: 4 g