Transistor MJE15032
Προβολή
8.0 A, 250 V NPN Bipolar Power Transistor
Features
DC Current Gain Specified to 5.0 Amperes
hFE = 50 (Min) @ IC = 0.5 Adc
hFE = 10 (Min) @ IC = 2.0 Adc
Collector-Emitter Sustaining Voltage
VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033
High Current Gain Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO-220AB Compact Package
Features
DC Current Gain Specified to 5.0 Amperes
hFE = 50 (Min) @ IC = 0.5 Adc
hFE = 10 (Min) @ IC = 2.0 Adc
Collector-Emitter Sustaining Voltage
VCEO(sus) = 250 Vdc (Min) MJE15032, MJE15033
High Current Gain Bandwidth Product
fT = 30 MHz (Min) @ IC = 500 mAdc
TO-220AB Compact Package