Transistor MJ15024G Bipolar - BJT 16A 250V 250W NPN
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Description:
Transistors Bipolar - BJT 16A 250V 250W NPN
Specifications
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 400 V
Collector- Emitter Voltage VCEO Max: 250 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.4 V
Maximum DC Collector Current: 16 A
Gain Bandwidth Product fT: 4 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-204-2 (TO-3)
Brand: ON Semiconductor
Continuous Collector Current: 16 A
DC Collector/Base Gain hFE Min: 15
Maximum Power Dissipation: 250 W
Minimum Operating Temperature: - 65 C
Transistors Bipolar - BJT 16A 250V 250W NPN
Specifications
Configuration: Single
Transistor Polarity: NPN
Collector- Base Voltage VCBO: 400 V
Collector- Emitter Voltage VCEO Max: 250 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1.4 V
Maximum DC Collector Current: 16 A
Gain Bandwidth Product fT: 4 MHz
Maximum Operating Temperature: + 150 C
Mounting Style: Through Hole
Package/Case: TO-204-2 (TO-3)
Brand: ON Semiconductor
Continuous Collector Current: 16 A
DC Collector/Base Gain hFE Min: 15
Maximum Power Dissipation: 250 W
Minimum Operating Temperature: - 65 C