Transistor JFET N-CH -25V 10mA TO-92 2N3819 Central Semiconductor
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Specifications
Transistor Type: JFET
Technology: Si
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 25 V
Vgs - Gate-Source Breakdown Voltage: 25 V
Id - Continuous Drain Current: 20 mA
Pd - Power Dissipation: 360 mW
Mounting Style: Through Hole
Package/Case: TO-92
Configuration: Single
Product: RF JFET
Unit Weight: 206 mg