Transistor IRFR420TRPBF Mosfet N-Chan 500V 2.4 Amp
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Specifications
Manufacturer: Vishay
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 500 V
Gate-Source Breakdown Voltage: +/- 20 V
Continuous Drain Current: 2.4 A
Rds On: 3 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package/Case: DPAK
Fall Time: 16 ns
Forward Transconductance - Min: 1.5 S
Gate Charge Qg: 19 nC
Minimum Operating Temperature: - 55 C
Power Dissipation: 2.5 W
Rise Time: 8.6 ns
Manufacturer: Vishay
Transistor Polarity: N-Channel
Drain-Source Breakdown Voltage: 500 V
Gate-Source Breakdown Voltage: +/- 20 V
Continuous Drain Current: 2.4 A
Rds On: 3 Ohms
Configuration: Single
Maximum Operating Temperature: + 150 C
Mounting Style: SMD/SMT
Package/Case: DPAK
Fall Time: 16 ns
Forward Transconductance - Min: 1.5 S
Gate Charge Qg: 19 nC
Minimum Operating Temperature: - 55 C
Power Dissipation: 2.5 W
Rise Time: 8.6 ns
