Transistor IRF640NPBF TO-220-3 MOSFET 200V 18A 150mOhm 44.7nC
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Specifications
Mounting Style: Through Hole
Package/Case: TO-220-3
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 18 A
Rds On - Drain-Source Resistance: 150 mOhms
Vgs - Gate-Source Voltage: 20 V
Qg - Gate Charge: 44.7 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Configuration: Single
Channel Mode: Enhancement
Fall Time: 5.5 ns
Forward Transconductance - Min: 6.8 S
Height: 15.65 mm
Length: 10 mm
Pd - Power Dissipation: 150 W
Rise Time: 19 ns
Factory Pack Quantity: 50
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
Width: 4.4 mm
Unit Weight: 6 g
