Transistor IRF630 TO-220-3 MOSFET 200V 10A 400mOhm 31nC
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Specifications
Mounting Style:Through Hole
Package/Case:TO-220-3
Number of Channels:1 Channel
Transistor Polarity:N-Channel
Vds - Drain-Source Breakdown Voltage:200 V
Id - Continuous Drain Current:9 A
Rds On - Drain-Source Resistance:400 mOhms
Vgs - Gate-Source Voltage:10 V
Vgs th - Gate-Source Threshold Voltage:2 V
Qg - Gate Charge:31 nC
Minimum Operating Temperature:- 65 C
Maximum Operating Temperature:+ 150 C
Pd - Power Dissipation:75 W
Configuration:Single
Channel Mode:Enhancement
Forward Transconductance - Min:3 S
Rise Time:15 ns
Typical Turn-On Delay Time:10 ns
Unit Weight:330 mg
Height:9.15 mm
Length:10.4 mm
Width:4.6 mm