Transistor CNY17-2 Optocouplers NPN Phototransistor
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Specifications
Manufacturer: Vishay
Input Type: DC
Maximum Collector Emitter Voltage: 70 V
Maximum Collector Emitter Saturation Voltage: 0.4 V
Isolation Voltage: 5000 Vrms
Current Transfer Ratio: 125 %
Maximum Forward Diode Voltage: 1.65 V
Maximum Input Diode Current: 60 mA
Maximum Collector Current: 100 mA
Maximum Power Dissipation: 150 mW
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 55 C
Package/Case: PDIP-6
Forward Current: 10 mA
Maximum Reverse Diode Voltage: 6 V
Number of Channels per Chip: 1 Channel
Output Device: NPN Phototransistor
Output Type: DC
Manufacturer: Vishay
Input Type: DC
Maximum Collector Emitter Voltage: 70 V
Maximum Collector Emitter Saturation Voltage: 0.4 V
Isolation Voltage: 5000 Vrms
Current Transfer Ratio: 125 %
Maximum Forward Diode Voltage: 1.65 V
Maximum Input Diode Current: 60 mA
Maximum Collector Current: 100 mA
Maximum Power Dissipation: 150 mW
Maximum Operating Temperature: + 100 C
Minimum Operating Temperature: - 55 C
Package/Case: PDIP-6
Forward Current: 10 mA
Maximum Reverse Diode Voltage: 6 V
Number of Channels per Chip: 1 Channel
Output Device: NPN Phototransistor
Output Type: DC
