Transistor NPN 2A TO-220-3 BUX85 onsemi
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Bipolar Transistors - BJT
Specification
Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: NPN
Configuration: Single
Maximum DC Collector Current: 2 A
Collector- Emitter Voltage VCEO Max: 450 V
Collector- Base Voltage VCBO: -
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1 V
Pd - Power Dissipation: 50 W
Gain Bandwidth Product fT: 4 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 2 A
DC Collector/Base Gain hFE Min: 30
Width: 4.83 mm
Height: 15.75 mm
Length: 10.53 mm
Unit Weight: 6 g