Transistor bipolar NPN 45V TO-18 BCY59-Viii Central Semiconductor
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Specifications
Mounting Style: Through Hole
Package/Case: TO-18
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 45 V
Collector- Base Voltage VCBO: 45 V
Emitter- Base Voltage VEBO: 7 V
Collector-Emitter Saturation Voltage: 700 mV
Maximum DC Collector Current: 100 mA
Pd - Power Dissipation: 340 mW
Gain Bandwidth Product fT: 150 MHz
Minimum Operating Temperature: - 65 C
Maximum Operating Temperature: + 200 C
Continuous Collector Current: 100 mA
DC Collector/Base Gain hFE Min: 180
DC Current Gain hFE Max: 310