Transistor 2SC3356 SMD
Προβολή
Τεχνικά χαρακτηριστικά:
Low Noise and High Gain:
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
High Power Gain:
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz
Collector to Base Voltage VCBO : 20 V
Collector to Emitter Voltage VCEO : 12 V
Emitter to Base Voltage VEBO : 3.0 V
Collector Current IC : 100 mA
Total Power Dissipation PT : 200 mW
Junction Temperature Tj : 150 oC
Storage Temperature Tstg : -65 to +150 oC