Transistor BJT 60Vcbo 50Vceo 5.0V 150mA 400mA TO-92-3 2SC1815 Central Semiconductor
-16%
Κατόπιν Παραγγελίας
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Specifications
Mounting Style: Through Hole
Package/Case: TO-92-3
Transistor Polarity: NPN
Configuration: Single
Collector- Emitter Voltage VCEO Max: 50 V
Collector- Base Voltage VCBO: 60 V
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 250 mV
Maximum DC Collector Current: 150 mA
Pd - Power Dissipation: 400 mW
Gain Bandwidth Product fT: 80 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 125 C
Continuous Collector Current: 150 mA
DC Collector/Base Gain hFE Min: 70
DC Current Gain hFE Max: 700
Type: BJTs - Bipolar Transistors
Unit Weight: 1,788 g
