STGF19NC60HD IGBT Transistors N-CHANNEL MFT
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Specifications
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.8 V/1.6 V
Maximum Gate Emitter Voltage: +/- 20 V
Gate-Emitter Leakage Current: +/- 100 nA
Maximum Operating Temperature: + 150 C
Package/Case: TO-220-3 FP
Packaging: Tube
Continuous Collector Current Ic Max: 16 A
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Pd - Power Dissipation: 35 W
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 1.8 V/1.6 V
Maximum Gate Emitter Voltage: +/- 20 V
Gate-Emitter Leakage Current: +/- 100 nA
Maximum Operating Temperature: + 150 C
Package/Case: TO-220-3 FP
Packaging: Tube
Continuous Collector Current Ic Max: 16 A
Minimum Operating Temperature: - 55 C
Mounting Style: Through Hole
Pd - Power Dissipation: 35 W