Mosfet 30V 1 N-Ch TO-252-3 HEXFET 5.8mOhms 15nC IRLR8726TRPBF Infineon

Specifications

Technology: Si
Mounting Style: SMD/SMT
Package/Case: TO-252-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 86 A
Rds On - Drain-Source Resistance: 8 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2.35 V
Qg - Gate Charge: 15 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 75 W
Channel Mode: Enhancement
Tradename: HEXFET
Configuration: Single
Fall Time: 16 ns
Forward Transconductance - Min: 73 S
Rise Time: 49 ns
Transistor Type: 1 N-Channel
Type: HEXFET Power MOSFET
Typical Turn-Off Delay Time: 15 ns
Typical Turn-On Delay Time: 12 ns

Unit Weight: 330 mg

Height: 2.3 mm
Length: 6.5 mm
Width: 6.22 mm