IRG4BC30WPBF IGBT trnansistors 600V Warp 60-150kHz Infineon
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Specifications
Manufacturer: Infineon
RoHS: RoHS Compliant Details
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.7 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 23 A
Pd - Power Dissipation: 100 W
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Brand: Infineon Technologies
Height: 8.77 mm (Max)
Length: 10.54 mm (Max)
Minimum Operating Temperature: - 55 C
Width: 4.69 mm (Max)
Unit Weight: 6 g
Manufacturer: Infineon
RoHS: RoHS Compliant Details
Configuration: Single
Collector- Emitter Voltage VCEO Max: 600 V
Collector-Emitter Saturation Voltage: 2.7 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 23 A
Pd - Power Dissipation: 100 W
Mounting Style: Through Hole
Package/Case: TO-220-3
Packaging: Tube
Brand: Infineon Technologies
Height: 8.77 mm (Max)
Length: 10.54 mm (Max)
Minimum Operating Temperature: - 55 C
Width: 4.69 mm (Max)
Unit Weight: 6 g