Transistor N- MOSFET 520V 17,6A 70W TO220-3 STP5NK52ZD STMicroelectronics

Specification

Technology: Si
Mounting Style: Through Hole
Package/Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 520 V
Id - Continuous Drain Current: 4.4 A
Rds On - Drain-Source Resistance: 1.5 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4.5 V
Qg - Gate Charge: 16.9 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 70 W
Channel Mode: Enhancement
Configuration: Single
Fall Time: 15 ns
Product Type: MOSFETs
Rise Time: 13.6 ns
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23.1 ns
Typical Turn-On Delay Time: 11.4 ns


Fall Time: 15 ns
Height: 9.15 mm
Length: 10.4 mm
Width: 4.6 mm

Unit Weight: 2 g