IGBT Transistors 35A 1200V N-Ch TO-247-3 HGTG 10N120 BND
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Specifications
Technology: Si
Package/Case: TO-247-3
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 1200 V
Collector-Emitter Saturation Voltage: 2.45 V
Maximum Gate Emitter Voltage: +/- 20 V
Continuous Collector Current at 25 C: 17 A
Pd - Power Dissipation: 298 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Continuous Collector Current: 35 A
Continuous Collector Current Ic Max: 35 A
Gate-Emitter Leakage Current: +/- 250 nA
Height: 20.82 mm
Length: 15.87 mm
Width: 4.82 mm
Unit Weight: 6,390 g
- Κατασκευαστής: ON Semiconductor
- Κωδικός Προϊόντος: 028573
- Διαθεσιμότητα: Διαθέσιμο
- Τιμή web: 7,00€
- (H τιμή συμπεριλαμβάνει ΦΠΑ)
- Χωρίς ΦΠΑ: 5,65€
Χρειάζεσαι βοήθεια; +30 26510 24011
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